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Proceedings Paper

A High-Transconductance AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Fet With Pd-Buried Gate Structure
Author(s): K. Inoue; K. Nishii; K. Bando; A. Tezuka; T. Matsuno; T. Onuma
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Paper Abstract

A high-transconductance AlGaAs/GaAs/AlGaAs selectively-doped double-heterojunction FET (SD-DH FET) with 1μm gate length has been fabricated by using high-quality epitaxial layer grown by MBE and Pd-buried gate structure. The double-heterojunction structure showed high sheet electron concentration of 2.5x10 12 /cm 2 and high electron mobility of 37000cm 2 /Vs at 77K. The sheet resistance at room temperature was 450 ohm/sq., which is about one half of that for a conventional high electron mobility transistor (HEMT). Systematic change of SD-DH FET characteristics with threshold voltage variation has been studied by gradually burying Pd into AlGaAs layer. It was found that transconductance of SD-DH FET monotonically increased for threshold voltage up to 0.1V, at which maximum extrinsic transconductance of 500mS/mm 7 was obtained. The estimated saturation velocity of electrons in SD-DH FET was 1.7 -2.0x10 7 cm/s, which is comparable to that of HEMT. The SD-DH FET has been shown to be superior to conventional HEMT fabricated at the same time in high current drivability, high transconductance and lower drain conductance.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941059
Show Author Affiliations
K. Inoue, Matsushita Electric Industrial Co., Ltd. (Japan)
K. Nishii, Matsushita Electric Industrial Co., Ltd. (Japan)
K. Bando, Matsushita Electric Industrial Co., Ltd. (Japan)
A. Tezuka, Matsushita Electric Industrial Co., Ltd. (Japan)
T. Matsuno, Matsushita Electric Industrial Co., Ltd. (Japan)
T. Onuma, Matsushita Electric Industrial Co., Ltd. (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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