Proceedings Paper
Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer| Format | Member Price | Non-Member Price |
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Paper Abstract
A technique for the reliable fabrication of gratings at 385nm periods in InP/InGaAsP has been demonstrated. A two stage RIE process involving an intermediate dielectric masking layer was used to produce grating with amplitudes up to 220nm. These structures have been successfully overgrown by LPE and processed into working DFB lasers.
Paper Details
Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941049
Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941049
Show Author Affiliations
L. Tarof, Bell-Northern Research (Canada)
K. Fox, Bell-Northern Research (Canada)
Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)
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