Share Email Print

Proceedings Paper

Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer
Author(s): L. Tarof; K. Fox
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A technique for the reliable fabrication of gratings at 385nm periods in InP/InGaAsP has been demonstrated. A two stage RIE process involving an intermediate dielectric masking layer was used to produce grating with amplitudes up to 220nm. These structures have been successfully overgrown by LPE and processed into working DFB lasers.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941049
Show Author Affiliations
L. Tarof, Bell-Northern Research (Canada)
K. Fox, Bell-Northern Research (Canada)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?