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Proceedings Paper

Invited Paper Grating Surface Emitting, Semiconductor Lasers
Author(s): G. A. Evans; J. M. Hammer; N. W. Carlson
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Paper Abstract

Grating-surface-emitting diode lasers have the capability of producing a dynamically stable single-frequei cy output with angular beam divergences perpendicular to the grating lines of much less than 10. Because the emitting spot size of conventional edge emitting semiconductor lasers is very small, their beam divergences are very large: typically 70 parallel and 300 perpendicular to the p-n junction. In addition, the small optical spot size at the chip facet results in extremely high power densities (> 106 W/cm2) when driven to high power and ultimately causes catastrophic failure by melting the facet in AIGaAs lasers.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941048
Show Author Affiliations
G. A. Evans, David Samoff Research Center, Inc. (United States)
J. M. Hammer, David Samoff Research Center, Inc. (United States)
N. W. Carlson, David Samoff Research Center, Inc. (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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