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Proceedings Paper

High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements
Author(s): Joachim Wiirfl; Ram P. Gupta; Hans L. Hartnagel
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Paper Abstract

A systematic investigation of high temperature stable metal contacts on GaAs using WSi2 as a diffusion barrier between the Ge and the Au metallization of a GaAs-Ge-WSi2-Au contact is presented. The effects of temperature stressing up to 610°C regarding the contact composition were characterized by XPS sputter profil-ing techniques and supported by electrical measurements of the contact parameters. It is shown that the con-tact system remains stable for long-term operation conditions at 350°C (e.g. 2oo hours). At much higher temperatures (610°C) interdiffusion between WSi2-Au and WSi2-Ge together with an additional diffusion of Ga into the metallization constitutes the lifetime limiting mechanism of such contacts.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941046
Show Author Affiliations
Joachim Wiirfl, Institut fur Hochfrequenztechnik (F.R.G.)
Ram P. Gupta, Central Electronics Engineering Research Institute (India)
Hans L. Hartnagel, Institut fur Hochfrequenztechnik (F.R.G.)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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