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Proceedings Paper

Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing
Author(s): R . G. Wilson; S. w. Novak
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Paper Abstract

Profiles measured using secondary ion mass spectrometry for random and channeled implants of column II, IV, and VI elements in GaP, GaAs, InP, and InSb are decsribed. Depths and influence of furnace and lamp annealing on these profiles are emphasized.

Paper Details

Date Published: 22 April 1987
PDF: 2 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941045
Show Author Affiliations
R . G. Wilson, Hughes Research Laboratories (United States)
S. w. Novak, Charles Evans and Associates (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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