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Proceedings Paper

Experimental and theoretical investigations on the formation of acceptor-acceptor pair emission in GaAs
Author(s): Yunosuke Makita; Masahiko Mori; Nobukazu Ohnishi; Katsuhiro Irie; Shigeru Shigetomi; Hideki Tanaka
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Paper Abstract

Low temperature photoluminescence (PL) measurements were carried out for C-, Be-, Mg-, Ge-, Zn- and Cd-doped GaAs prepared by molecular beam epitaxy (MBE), liquid phase epitaxy (LPE) and ion implantation (I4). Two new emissions, temporarily denoted by 'g' and [g-g] were commonly observed in the above materials and no principal difference of spectra was obtained among the samples prepared by different doping methods. 'g' is situated just below the well-known bound exciton emissions (B.E.) and seems to be unshifted against the increase of acceptor concentration, [A] and was suggested to be the excited energy state of an isolated acceptor. [g-g] presents a significant energy-shift towards lower energy sides with increasing [A] and at the highest limit of [A], it converges at the well-defined optical transition from conduction band to acceptor level, (e,A). These observations together with a preliminary theory suggest that [g-g] can be ascribed to the pair between excited-acceptors. It was for the first time clearly demonstrated that the absence and overlook of these two specific emissions pertinent to acceptors in conventionally-prepared samples can be attributed to the strong optical compensation effect among acceptors and unintentionally introduced residual donors.

Paper Details

Date Published: 20 April 1987
PDF: 8 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941019
Show Author Affiliations
Yunosuke Makita, Electrotechnical Laboratory (Japan)
Masahiko Mori, Electrotechnical Laboratory (Japan)
Nobukazu Ohnishi, Institute of Fundamental Analysis Inc. Ltd. (Japan)
Katsuhiro Irie, Institute of Fundamental Analysis Inc. Ltd. (Japan)
Shigeru Shigetomi, Kurume University (Japan)
Hideki Tanaka, Tokai University (Japan)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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