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Proceedings Paper

Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD
Author(s): Shiro Sakai; Masayoshi Umeno; Young Soon Kim
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Paper Abstract

The initial growth model of III-V compounds on Si is proposed and the necessary conditions to obtain an anti-phase domain (APD) free crystal are discussed. APD free crystals can be obtained on the (100) Si surface having mono-atomic as well as hiatomic layer steps if the surface has a misalignment towards <011> ±θ (θ≠45°) direction. The stress produced by the difference in thermal expansion coefficients of Si and GaAs is also calculated and discussed. The stress in the GaAs layer can be zero by adding another layer having the thermal expansion coefficient higher than GaAs either on the Si substrate back surface, or on the GaAs grown surface or in between them.

Paper Details

Date Published: 20 April 1987
PDF: 7 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941016
Show Author Affiliations
Shiro Sakai, Nagoya Institute of Technology (Japan)
Masayoshi Umeno, Nagoya Institute of Technology (Japan)
Young Soon Kim, University of Florida (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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