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Proceedings Paper

Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD
Author(s): A. M. Huber; J. di Persio; M. A. di Forte-Poisson; C. Brylinski; R. Bisaro; C. Grattepain; O. Lagorsse
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Paper Abstract

This paper reports some new experimental results concerning InP epitaxy by LP-MOCVD using chemical angle polishing and a sensitive etching technique to characterize the defect morphology of the complete InP layer, interface and substrate. The distribution of defects is associated with the SIMS determined As and Ga content.

Paper Details

Date Published: 20 April 1987
PDF: 5 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941015
Show Author Affiliations
A. M. Huber, Thomson-Csf (France)
J. di Persio, Universite De Lille (France)
M. A. di Forte-Poisson, Thomson-Csf (France)
C. Brylinski, Thomson-Csf (France)
R. Bisaro, Thomson-Csf (France)
C. Grattepain, Thomson-Csf (France)
O. Lagorsse, Thomson-Csf (France)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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