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Proceedings Paper

InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy
Author(s): M. A. Tischler; N. G. Anderson; R. M. Kolbas; S. M. Bedair
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Paper Abstract

We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The quantum wells in this structure are six uncoupled InAs layers 6.6 Å thick separated by 509 Å thick GaAs barriers. These are the thinnest and most highly strained (7.4%) quantum wells ever reported to support stimulated emission. These results demonstrate that ALE is capable of growing laser quality material with good control of the growth process.

Paper Details

Date Published: 20 April 1987
PDF: 5 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941013
Show Author Affiliations
M. A. Tischler, IBM T. J. Watson Research Center (United States)
N. G. Anderson, North Carolina State University (United States)
R. M. Kolbas, North Carolina State University (United States)
S. M. Bedair, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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