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Proceedings Paper

Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors
Author(s): Klavs F. Jensen; Dimitrios I. Fotiadis; Peter W. Lee; Donald R. McKenna; Harry K. Moffat
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Paper Abstract

Gas phase chemistry and transport phenomena in MOCVD are addressed. A new MOCVD reactor arrangement for exploring the gas phase chemistry by in situ molecular beam mass spectrometry is presented along with pyrolysis data for Ga(CH3)3, Ga(C2H5)3 and As(CH3)3. Detailed two- and three-dimensional models of the classical horizontal and vertical MOCVD reactor configurations are described. These models provide new insight into flow, heat and mass transfer effects on film thickness uniformity and interface abruptness. For the horizontal reactor, model simulations demonstrate the existence of longitudinal buoyancy driven convection rolls which adversely affect film thickness uniformity. For the vertical reactor, the film thickness uniformity is shown to be strongly influenced by susceptor edge, reactor wall, and buoyancy effects. It is demonstrated that uniformity may be improved by shaping the reactor wall and rotating the susceptor. The existence of multiple steady flows in certain operating regions is illustrated. Concentration transients in the growth of heterojunctions are simulated and it is shown that the presence of recirculation cells widens the interface depth.

Paper Details

Date Published: 20 April 1987
PDF: 11 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941011
Show Author Affiliations
Klavs F. Jensen, University of Minnesota (United States)
Dimitrios I. Fotiadis, University of Minnesota (United States)
Peter W. Lee, University of Minnesota (United States)
Donald R. McKenna, University of Minnesota (United States)
Harry K. Moffat, University of Minnesota (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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