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Proceedings Paper

Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System
Author(s): M. C. Tamargo; J. L. de Miguel; R. E. Nahory; B. J. Skromme
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Paper Abstract

We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

Paper Details

Date Published: 20 April 1987
PDF: 3 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941006
Show Author Affiliations
M. C. Tamargo, Bell Communications Research (United States)
J. L. de Miguel, Bell Communications Research (United States)
R. E. Nahory, Bell Communications Research (United States)
B. J. Skromme, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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