UV-photoemission spectroscopy was used to measure directly the valence-band discontinuity, ΔEv, for both sides of a MnSe layer which was sandwiched between two ZnSe layers by the Molecular Beam Epitaxy method. ΔEv is 0.16±0.05 eV for each interface; the valence band edge EVmax of the wider-gap MnSe semiconductor lies within the ZnSe gap. The interface-pinning position of the Fermi level appears at 1.74 eV above Evmax of ZnSe. It is concluded that interfacial electrostatic dipoles are small compared to the observed shift in Evmax of MnSe, which lends a qualitative support to Tersoff's model [Phys. Rev. Lett 52, 465 11984); Phys. Rev. B 30, 4874 (1984)] of heterojunction band offsets. Photoemission from MnSe shows that the Mn-derived 3d states, which are responsible for the semiconductor magneto-optical properties, lay 4.2 ± 0.1 eV below EVax.

Date Published: 20 April 1987
PDF: 4 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.941004

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)