Proceedings Paper
Crystal Growth Of p-ZnSe And ZnSe p-n Junctions| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Low-resistive and stable p-type ZnSe crystal can be grown by the temperature difference method under controlled vapor pressure (TDM-CVP) of Zn in the solution of Se. The properties of a p-ZnSe crystal grown under optimum Zn pressure, which was about 7.2 atm at the growth temperature of 1050°C, show best value resulting in the suppression of the nonstoichiometric point defects. As a result, a p-n junction can be formed by the Ga diffusion under the control of Se pressure in the p-type ZnSe crystal and a high efficiency pure blue LED can be realized.
Paper Details
Date Published: 20 April 1987
PDF: 6 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940998
Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)
PDF: 6 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940998
Show Author Affiliations
Jun-ichi Nishizawa, Tohoku University (Japan)
Yasuo Okuno, Semiconductor Research Institute (Japan)
Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)
© SPIE. Terms of Use
