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Proceedings Paper

Growth And Characterization Of GaAs[sub]1-x[/sub]Sb[sub]x[/sub] On InP By Molecular Beam Epitaxy
Author(s): J. Klem; D. Huang; H. Morkoc; N. Otsuka
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Paper Abstract

We have grown GaAsi-xSbx alloys on InP by molecular beam epitaxy throughout the miscibility gap region and characterized these layers by a combination of variable temperature Hall measurements, room and low temperature photoluminescence and optical absorption, and transmission electron microscopy. For nearly lattice matched layers, we have obtained p-type material with room temperature hole concentrations of 0.5 - 3.0 1016cm-3 and associated mobilities of 40 - 70 cm2/Vs. Fitting the Hall data to a numerical model indicates that conductivity in these nominally undoped layers is due to two distinct acceptor levels. Photoluminescence linewidths less than 8 meV FWHM are observed at 4K.

Paper Details

Date Published: 20 April 1987
PDF: 4 pages
Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); doi: 10.1117/12.940990
Show Author Affiliations
J. Klem, University of Illinois (United States)
D. Huang, University of Illinois (United States)
H. Morkoc, University of Illinois (United States)
N. Otsuka, Purdue University (United States)

Published in SPIE Proceedings Vol. 0796:
Growth of Compound Semiconductors
Robert L. Gunshor; Hadis Morkoc, Editor(s)

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