Share Email Print

Proceedings Paper

Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors
Author(s): P. Schuitemaker; P. A. Houston; P. N. Robson
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Preparation of lattice matched InP/InGaAs(P) heterojunctions was first reported by Antypas et all in 1972. Initially research efforts were mainly concentrated on optical devices. In recent years three-terminal InP/InGaAs(P) heterojunction bipolar transistors (HBT's), for microwave and digital applications, have gained more interest. Several laboratories have reported HBT's fabricated by LPE techniques but these were not optimised. More recently devices grown by MBE and CBE have been demonstrated in the InP/ InGaAs system. This paper is concerned with discussing the intrinsic advantages to be gained by fabricating HBT's in this material system and progress attained to date is reviewed.

Paper Details

Date Published: 2 February 1988
PDF: 12 pages
Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); doi: 10.1117/12.940928
Show Author Affiliations
P. Schuitemaker, University of Sheffield, (United Kingdom)
P. A. Houston, University of Sheffield (United Kingdom)
P. N. Robson, University of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 0795:
Characterization of Very High Speed Semiconductor Devices and Integrated Circuits
Ravinder K. Jain, Editor(s)

© SPIE. Terms of Use
Back to Top