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Proceedings Paper

Infrared Reflectance Spectroscopy Of Ion-Implanted Soi Structures
Author(s): Bea M Lacquet; Pieter L Swart
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Paper Abstract

The use of IR reflectance measurements to study the properties of the insulating and surrounding layers obtained by implanting nitrogen into silicon is discussed. IR spectrometry yields not only information on the types and quantity of bonds in the implanted layer, but is also employed to determine other physical parameters of the layered structure. A model to simulate IR-reflectance measurements and extract parameters from it has been developed. The implanted wafer is modelled by a multilayered structure employing matrix methods in the analysis. The absorption peaks are represented by simple Lorentzian oscillators. IR reflectance spectra of the as-implanted and annealed samples were studied. The measured spectra were then compared with the model.

Paper Details

Date Published: 22 April 1987
PDF: 7 pages
Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940915
Show Author Affiliations
Bea M Lacquet, Rand Afrikaans University (South Africa)
Pieter L Swart, Rand Afrikaans University (South Africa)

Published in SPIE Proceedings Vol. 0794:
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices
Orest J. Glembocki; Fred H. Pollak; Jin-Joo Song, Editor(s)

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