Share Email Print

Proceedings Paper

Non-Equilibrium Electron Transport In Semiconductors
Author(s): A. F. J. Levi; T. H. Chiu; Y. Yafet
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We explore the physics of nonequilibrium electron transport in semiconductors with the aim of using this knowledge to develop new, ultrafast electronic and optoelectronic devices. In this paper a theory describing hot electron transport in n- and p-type semiconductors is discussed and operation of an n-type unipolar transistor with a 100Å wide base and current gain, β greater than 15 is demonstrated.

Paper Details

Date Published: 3 August 1987
PDF: 6 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940867
Show Author Affiliations
A. F. J. Levi, AT&T Bell Laboratories (United States)
T. H. Chiu, AT&T Bell Laboratories (United States)
Y. Yafet, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?