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Proceedings Paper

Dependence Of Subband Energies Of Electron And Hole In Si-Nipi S.L. On The Design Parameters
Author(s): E. G. Wang; H. L. Huang
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Paper Abstract

The results for tower energy-Level splittings and Fermi energy are given for (100),(110),(111) oriented Si-nipi material. Under the assumption of dn < (=dp) < d1 and dn (=dp) < d1 the paper has generally studied the dependence of subband energies of electron and hole in this material on dopant concentration, dopant layer thickness and free carrier concentration. The results in the two cases are compared with each other.

Paper Details

Date Published: 11 August 1987
PDF: 4 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940852
Show Author Affiliations
E. G. Wang, Liaoning university (PRC)
H. L. Huang, Liaoning university (PRC)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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