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Proceedings Paper

Optical Absorption In Thin Amorphous Si/SiO[sub]x[/sub] Multilayer Structures
Author(s): A. Bittar; O. Hunderi; H. J. Trodahl
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Paper Abstract

We have prepared amorphous Si/SiOx thin multilayer structures by evaporation onto substrates at room temperature. A detaied study of the optical absorption coefficient for individual layer thicknesses in the range 1.5 to 10 nm has been undertaken. We find evidence for bandgap widening in the thinnest layer superlattices. Our results show, however, that the position of the absorption edge is sensitive to sample quality. Extensive modelling on this system demonstrates that the apparent edge is particularly sensitive to layer thickness variations, i.e. to aperiodicity in the superlattice structure.

Paper Details

Date Published: 11 August 1987
PDF: 4 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940847
Show Author Affiliations
A. Bittar, DSIR (New Zealand)
O. Hunderi, Norwegian Institute of Technology (Norway)
H. J. Trodahl, Victoria University (New Zealand)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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