Proceedings Paper
Second-Order Optical Susceptibility Of Strained GeSi/Si Superlattices And Ge/Si Layered Artificial Crystals| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
A strain-induced ordered phase has been observed recently in the alloy layers fo a GeSi/ Si strained-layer superlattice, in which the ordered unit cell is non-centrosymmetric. Using the bond-charge model of Jha and Bloembergen, the second-order susceptibility and the linear electro-optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs. The calculation has also been extended to artificial crystals consisting of alternating bilayers of Si and Ge on (001) Si substrates recently reported. For the indicated structure, the Pockels coefficient vanishes in this case for E [001].
Paper Details
Date Published: 11 August 1987
PDF: 10 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940844
Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)
PDF: 10 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940844
Show Author Affiliations
Lionel Friedman, Worcester Polytechnic Institute (United States)
Richard A. Soref, Hanscom Air Force Base (United States)
Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)
© SPIE. Terms of Use
