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Proceedings Paper

Free-Carrier Absorption And Saturation Of Intervalence-Band Transitions In P-Type Semiconductor Quantum Wells
Author(s): Yia-Chung Chang; R. B. James
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Paper Abstract

Calculations of free-carrier absorption in p-type semiconductor quantum wells as a function of carrier density, temperature and light intensity are reported. Valence band dispersions used in the calculation are obtained by a multi-band effective mass method which includes the effects of warping and heavy-light hole mixing. Carrier lifetimes are taken into account within the deformation potential approximation. Deviation of hole distribution from thermal equilibrium due to optical pumping is included in the calculation, and the saturation behavior is studied.

Paper Details

Date Published: 11 August 1987
PDF: 8 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940843
Show Author Affiliations
Yia-Chung Chang, University of Illinois at Urbana-Champaign (United States)
R. B. James, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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