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Proceedings Paper

Temperature Dependent Optical Studies Of GaAs/AlGaAs Single Quantum Wells
Author(s): Y. J. Chen; Emil S. Koteles; Johnson Lee; J. Y. Chi; B. S. Elman
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Paper Abstract

We report on detailed photoluminescence (PL) and photoluminescence excitation (PLE) studies of GaAs/A1GaAs single quantum wells (SQW) with differing well widths measured over temperatures ranging from 5K to 300K. A new trapping phenomenon was observed at low temperatures, which affects the linewidth and PL intensities (radiation lifetimes) of free excitons in the SQWs and which is related to the formation of bound excitons. At higher temperatures, excitonic linewidths were primarily broadened by optical phonon scattering. The temperature dependencies of the excitonic energies of SQWs were similar to that of bulk material and were independent of the quantum well width.

Paper Details

Date Published: 11 August 1987
PDF: 6 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940836
Show Author Affiliations
Y. J. Chen, GTE Laboratories Incorporated (United States)
Emil S. Koteles, GTE Laboratories Incorporated (United States)
Johnson Lee, GTE Laboratories Incorporated (United States)
J. Y. Chi, GTE Laboratories Incorporated (United States)
B. S. Elman, GTE Laboratories Incorporated (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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