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Proceedings Paper

Electrical And Optical Properties Of Semiconductor Doping Superlattices
Author(s): P. Paul Ruden
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Paper Abstract

A short, elementary introduction into the physics of n-i-p-i doping superlattices is presented. Their electrical and optical properties which result from the unique tunability of their bandstructures are discussed. Examples of GaAs based n-i-p-i and hetero-n-i-p-i superlattices illustrate the novel phenomena that have been predicted and experimentally observed. The device potential of these engineered semiconductor materials is also discussed.

Paper Details

Date Published: 11 August 1987
PDF: 9 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940818
Show Author Affiliations
P. Paul Ruden, Honeywell Physical Sciences Center (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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