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Proceedings Paper

Resonant Tunneling In Double Barrier Heterostructures
Author(s): M. A. Reed; R. T. Bate; J. W. Lee
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Paper Abstract

Resonant tunneling in a variety of double barrier, single quantum well heterostructures has been investigated. Negative differential resistance has been observed by tunneling through both the ground and first excited quasistationary states of the quantum well. The peak positions agree well with a 65% conduction band offset. The tunnel barriers have been replaced by short period binary superlattices, where an anomalously low barrier height is observed. Resonant tunneling through a GaAs contact / double AlGaAs barrier / single InGaAs quantum well heterostructure has also been observed, where we have demonstrated tunneling through the first excited state above a ''hidden" ground state of the quantum well. Finally, we have observed resonant tunneling through a double barrier, single quantum well HgTe/Hg1-xCdxTe heterostructure where a peak-to-valley tunnel current ratio of 1.4:1 is observed at room temperature. This observation provides direct evidence for the existence of the proposed intrinsic interface state model.

Paper Details

Date Published: 11 August 1987
PDF: 8 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940816
Show Author Affiliations
M. A. Reed, Texas Instruments Incorporated (United States)
R. T. Bate, Texas Instruments Incorporated (United States)
J. W. Lee, Texas Instruments Incorporated (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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