Proceedings Paper
Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques| Format | Member Price | Non-Member Price |
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Paper Abstract
The results of varying dry polysilicon etch process parameters are presented. Techniques used to study and interpret the results are electrical linewidth measurement and thin film thickness measurement. Conclusions are drawn about the suitability of the process for specific design rule considerations, and the tolerance of the parameters involved.
Paper Details
Date Published: 17 April 1987
PDF: 8 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940430
Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)
PDF: 8 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940430
Show Author Affiliations
Roger Patrick, LSI Logic Corporation (United States)
Beth Arden, Prometrix Corporation (United States)
Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)
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