The National Bureau of Standards has initiated a program to develop scanning electron microscope linewidth measurement standards for the integrated circuit community. This program involves the development of: a scanning electron microscope-based linewidth measurement and standard reference material certification instrument, the necessary electron beam/sample interaction modelling, and the appropriate micrometer and submicrometer artifacts. The basic problems that must be overcome to achieve accurate submicrometer feature size measurements in the scanning electron microscope for these artifacts will be reviewed and some suggestions of what can be done to "bridge-the-gap" until such standards become available will be given.

Date Published: 17 April 1987
PDF: 6 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940424

Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)