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Proceedings Paper

In-Process Linewidth Measurement Of Polysilicon Gates Using A Scanning Electron Microscope
Author(s): Fran Robb
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Paper Abstract

SEM measurement of uncoated samples is not as easy as the salesmen would like us to believe! Despite the relatively "simple" sample, optimizing for reproducible submicron linewidth measurements of polysilicon gates was not trivial. Beam energy was shown to control both the signal-to-noise and the slope of the measurement signal, while beam exposure time was found to cause systematic linewidth changes. Optimized measurements utilized a 2.3 kV beam energy, controlled beam exposure times, and a 60% threshold level. No damage was measured on MOS devices exposed at 2.3 kV, at least when such measurements were followed by the anneals typical for MOS process flows.

Paper Details

Date Published: 17 April 1987
PDF: 9 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940415
Show Author Affiliations
Fran Robb, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)

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