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Proceedings Paper

Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay
Author(s): David J. Elliott; Kenneth J. Polasko; Bernhard P. Piwczyk; Ernest W. Balch
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Paper Abstract

The reduction in VLSI feature dimensions has progressed at a rapid rate. Dynamic memory circuit complexity has doubled every year and a half over the past twenty years. A large percentage of these circuits' complexity improvement can be directly attributed to improved optical exposure tools and photoresist processing.. Optical exposure tools have extended microlithography well into the submicrometer regime by reducing the exposing wavelength and increasing the numerical aperture. Another key factor in extending resolution capabilities and proess latitude is the introduction of higher gamma, resist processes. For example, contrast enhancing materials (CEM) can effectively increase the resist gamma by a factor of two to three.

Paper Details

Date Published: 1 September 1987
PDF: 9 pages
Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); doi: 10.1117/12.940403
Show Author Affiliations
David J. Elliott, Leitz-Image Micro Systems (United States)
Kenneth J. Polasko, General Electric Company (United States)
Bernhard P. Piwczyk, Leitz-Image Micro Systems (United States)
Ernest W. Balch, General Electric Company (United States)

Published in SPIE Proceedings Vol. 0774:
Lasers in Microlithography
John Samuel Batchelder; Daniel J. Ehrlich; Jeff Y. Tsao, Editor(s)

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