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Proceedings Paper

A High Speed Nanometric Electron Beam Lithography System
Author(s): T. Matsuzaka; N. Saitou; M. Okumura; G. Matsuoka; M. Ohyama
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Paper Abstract

An electron beam lithography system has been developed for research and development of fine structure advanced devices. The system is capable of 0.1 um resolution, 0.04 um stitching accuracy, 0.04 um overlay accuracy and 1 wafer/hr throughput. One of key technologies used in this system is a variable gaussian optics and a pattern edging-process. This makes it possible to realize ten times higher throughput than the conventional fixed gaussian beam method and provide a simple means of proximity correction.

Paper Details

Date Published: 30 June 1987
PDF: 6 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940376
Show Author Affiliations
T. Matsuzaka, Hitachi, Ltd. (Japan)
N. Saitou, Hitachi, Ltd. (Japan)
M. Okumura, Hitachi, Ltd. (Japan)
G. Matsuoka, Hitachi, Ltd. (Japan)
M. Ohyama, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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