
Proceedings Paper
Sub-Half Micrometer Resist Processes For The Aeble-150Format | Member Price | Non-Member Price |
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Paper Abstract
Recent results in the development of positive and negative resist processes for use with the AEBLE-150 electron beam lithography system are discussed, detailing techniques used for the evaluation and modeling of resist performance. Specific results for RD-2000N, a negative resist available commercially from the Hitachi Corporation, are presented demonstrating processes suitable for use with the AEBLE-150 for feature sizes below 0.5μm. In addition, results of processes with high resolution imaging in thick layers of PMMA are presented.
Paper Details
Date Published: 30 June 1987
PDF: 7 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940369
Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)
PDF: 7 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940369
Show Author Affiliations
R. D. Coyne, Hughes Research Laboratories (United States)
O. W. Otto, Hughes Research Laboratories (United States)
Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)
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