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Proceedings Paper

X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks
Author(s): Paul King; Lawrence Pan; Piero Pianetta; Alex Shimkunas; Philip Mauger; Daniel Seligson
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Paper Abstract

Boron nitride membranes (produced through chemical vapor deposition of diborane and ammonia) have been exposed to synchrotron radiation and have showed severe degradation in optical properties after absorbing doses on the order of 200kJ/cm3. Damage kinetics are described as well as measurements made to identify the damage mechanism. Preliminary results on associated mechanical damage are also presented. Boron nitride membranes (produced through the pyrolysis of borazine), silicon nitride and silicon membranes exposed and tested in the same manner showed no such degradation.

Paper Details

Date Published: 30 June 1987
PDF: 6 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940362
Show Author Affiliations
Paul King, Stanford Synchrotron Radiation Lab (United States)
Lawrence Pan, Stanford Synchrotron Radiation Lab (United States)
Piero Pianetta, Stanford Synchrotron Radiation Lab (United States)
Alex Shimkunas, Micronix (United States)
Philip Mauger, Micronix (United States)
Daniel Seligson, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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