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Proceedings Paper

Optimized Tri-Layer Resist Technique For Volume Production
Author(s): E. Kawamura; J. Konno; K. Inayoshi; T. Takada
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Paper Abstract

Tri-layer resist technique has been developed for volume production of VLIs to achieve 0.8 um line and space pattern using an NA 0.35 stepper. The 0.8 um feature process was done mostly by optimizing normality of developer for top-layer resist. Obtained resolution dep ends strongly on normality of the developer. The lower normality gives much wider latitude to CD control. Possibility of application of tri-layer resist process whose struc,ture con-sists of top-layer resist, middle-layer silicon resin, and underlayer resist was examined.

Paper Details

Date Published: 30 June 1987
PDF: 3 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940357
Show Author Affiliations
E. Kawamura, Fujitsu Ltd. (Japan)
J. Konno, Fujitsu Ltd. (Japan)
K. Inayoshi, Fujitsu Ltd. (Japan)
T. Takada, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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