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Proceedings Paper

A Hybrid E-Beam/Deep-Uv Lithography For Gaas Fet's
Author(s): Yoshihiro Todokoro; Hisashi Watanabe; Hiroshi Takenaka; Hiroshi Yamashita
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Paper Abstract

A hybrid e-beam/deep-UV lithography (a D2ED process) and its application for GaAs FET's are described. A D2 ED process consists of Deep UV exposure and Development in MIBK (methyl isobutyl ketone) for less critical features, and E-beam exposure and Development in IPA (isopropyl alcohol) for critical fine features. E-beam exposure is performed at one pixel per minimum linewidth. A higher throughput and better linewidth control are obtained by using a D ED process. A high overlay accuracy is obtained by use of tungsten registration marks and D2ED processes for the source/drain and gate levels in GaAs FET's.

Paper Details

Date Published: 30 June 1987
PDF: 7 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940353
Show Author Affiliations
Yoshihiro Todokoro, Matsushita Electronics Corporation (Japan)
Hisashi Watanabe, Matsushita Electronics Corporation (Japan)
Hiroshi Takenaka, Matsushita Electronics Corporation (Japan)
Hiroshi Yamashita, Matsushita Electronics Corporation (Japan)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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