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Proceedings Paper

High Throughput And Accuracy X-Ray Stepper With Plasma Source
Author(s): A. Une; M. Suzuki; I. Okada; Y. Saitoh; H. Yoshihara
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Paper Abstract

For the replication of submicron patterns with high throughput and high overlay accuracy, an x-ray stepper with a plasma source has been developed. The maintenance interval of the gas-puff z-pinch plasma source is 100 times better than that of the previous plasma source. The improvement is achieved by reducing electrode consumption and devising a new plasma remover. A single grating and double-pitch dual grating technique has been developed to align wafer to mask. The gap and lateral displacement between mask and wafer are detected by utilizing +1st-order diffraction light intensities. Their detection resolutions are less than 0.01pm. By combining this detection system with the conventional stages, an absolute gap accuracy of ±0.3μm and a lateral alignment servo accuracy of ±0.02μm have been achieved. Using this new x-ray stepper with the plasma source, a 0.3pm pattern has been replicated accurately in a maximum field of 30x3Omm at a throughput of 20 wafers per hour.

Paper Details

Date Published: 30 June 1987
PDF: 9 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940352
Show Author Affiliations
A. Une, NTT Electrical Communications Laboratories (Japan)
M. Suzuki, NTT Electrical Communications Laboratories (Japan)
I. Okada, NTT Electrical Communications Laboratories (Japan)
Y. Saitoh, NTT Electrical Communications Laboratories (Japan)
H. Yoshihara, NTT Electrical Communications Laboratories (Japan)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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