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Proceedings Paper

A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography
Author(s): D. So; B. Lai; F. Cerrina
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Paper Abstract

We present a new model capable of fully describing the image formation in X-ray Lithography with a Synchrotron Radiation source. All the relevant effects, such as beam size, scanning, transmittivity and reflectivity are included. The model itself can be used to predict the achievable resolution for a given process. It is applied to the discussion of a particular process, based on Hewlett Packard mask technology and using one of the Center beamlines, for which we show that resolution in the sub-0.25 micron region can be easily achieved. Solutions to the problem of anamorphicity are presented, as well a discussion of the optimum configuration for scanning.

Paper Details

Date Published: 30 June 1987
PDF: 7 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940350
Show Author Affiliations
D. So, University of Wisconsin (United States)
B. Lai, University of Wisconsin (United States)
F. Cerrina, University of Wisconsin (United States)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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