Proceedings Paper
High Resolution Positive Photoresist For Submicron Photolithography| Format | Member Price | Non-Member Price |
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Paper Abstract
Optical lithography is achieving itself into submicron region. In the limitation of resolution for stepper there is a decrease in contrast and so it requires more exposure amount than that of D. Also it is not possible to achieve faithful transcription of fine pattern dimension. The resolution of TSMR-8800 which is developed as high resolution positive photoresist is 0.6 μm. Faithful transcription of the mask pattern is possible for 0.7 μm line and space pattern. It shows good properties compared with conventional photoresist.
Paper Details
Date Published: 25 August 1987
PDF: 6 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940344
Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)
PDF: 6 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940344
Show Author Affiliations
Hidekatsu Kohara, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hatsuyuki Tanaka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masanori Miyabe, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hatsuyuki Tanaka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masanori Miyabe, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yoshiaki Arai, Tokyo Olika Kogyo Co., Ltd. (Japan)
Shingo Asaumi, Tokyo Olika Kogyo Co., Ltd. (Japan)
Toshimasa Nakayama, Tokyo Olika Kogyo Co., Ltd. (Japan)
Shingo Asaumi, Tokyo Olika Kogyo Co., Ltd. (Japan)
Toshimasa Nakayama, Tokyo Olika Kogyo Co., Ltd. (Japan)
Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)
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