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Proceedings Paper

Oxygen Reactive Ion Etching For Multilevel Lithography
Author(s): Mark A. Hartney; Wayne M. Greene; Dennis W. Hess; David S. Soong
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Paper Abstract

Oxygen plasmas used for pattern transfer in multilevel lithography have been characterized over a range of plasma parameters such as power and pressure. Etch rates of silicon dioxide and representative silicon-containing and planarizing polymers are correlated with these plasma parameters. Plasma diagnostic measurements include DC self-bias voltage, ion flux and incident ion energy distributions. Measurement of ion energy distributions yields fundamental information about the etching process since Si02 sputter rates and oxygen ion implant depths are strong functions of ion energy.

Paper Details

Date Published: 25 August 1987
PDF: 5 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940343
Show Author Affiliations
Mark A. Hartney, University of California (United States)
Wayne M. Greene, University of California (United States)
Dennis W. Hess, University of California (United States)
David S. Soong, University of California (United States)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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