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Proceedings Paper

A Practical Approach To Lift-Off
Author(s): Susan K. Jones; Richard C. Chapman; Edward K. Pavelchek
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Paper Abstract

Lift-off technology provides an alternate metal patterning technology to that of subtractive etching. In this raper, we describe an image reversal process which provides a practical means for reliably producing resist stencils which are required for successful lift-off in a 2.0 μm metal pitch CMOS process, as well as for experimental submicron processing. Experimental data and PROSIM simulations are presented to show the effects of patterning exposure dose, flood exposure dose, develop time, and focus parameters on resist linewidths as well as for control of resist retrograde (undercut) sidewall angles. Deposition and subsequent lift-off of Al/Cu alloys and sandwich metallizations is demonstrated. Because the image reversal process enables pattern definition at the top of the resist film, it is demonstrated that thicker resist films can be used to produce finer resolution of lift-off stencils over topography than would have been expected without resorting to multilayer resist structures.

Paper Details

Date Published: 25 August 1987
PDF: 13 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940329
Show Author Affiliations
Susan K. Jones, Microelectronics Center of North Carolina (United States)
Richard C. Chapman, Microelectronics Center of North Carolina (United States)
Edward K. Pavelchek, Shipley Company (United States)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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