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Proceedings Paper

Novolak Design For High Resolution Positive Photoresists
Author(s): M. Hanabata; A. Furuta; Y. Uemura
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Paper Abstract

The mechanism of resolution improvement in novolak-based positive photoresists was investigated from the stand-point of the image formation process. The image formation process in the novolak-quinonediazide system involves the dissolution inhibition in unexposed parts and the dissolution promotion in exposed parts. The 4-(gamma)-value, which is one of the indexes of resolution capabilities, depends greatly on the difference between the solubility of unexposed parts and that of exposed parts, i.e.-the lower dissolution rate in unexposed parts(Ro) and the higher one in exposed parts(Rp) are desirable to obtain high γvalues.

Paper Details

Date Published: 25 August 1987
PDF: 8 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940312
Show Author Affiliations
M. Hanabata, Sumitomo Chemical Co., Ltd. (Japan)
A. Furuta, Sumitomo Chemical Co., Ltd. (Japan)
Y. Uemura, Sumitomo Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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