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Proceedings Paper

A New Process For Contrast Enhancement Of Photoresist Patterns
Author(s): Yoshimitsu Okuda; Tohru Ohkuma; Yukio Takashima; Yukio Miyai; Morio Inoue
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Paper Abstract

A new simple photoresist process for contrast enhancement of submicron pattern plofiles is proposed. This process consists of the conventional positive photoresist process steps and a deep UV flood exposure step after the image exposure . In the printing experiments novolac resists and g-line steppers with N.A. value of 0.42 and 0.35 are used. Using the new process 0.6 μm line and space are distinctly resolved for S-1400 (Shipley). The resolution is improved by 0.2 μm and the edge acuity of 80-90° is obtained compared with 60-65° by the conventional process for OFPR-500053 (Tokyo Ohka dyed photoresist). The effect of contrast enhancement is verified by the meausrements of photoresist dissolution rate in the developer. Dissolution rate in the new process is suppressed by 60% of that in the conventional process at the surface of resists. The contrast enhancement with the use of the new process is confirmed by the simultation based on the program SAMPLE in which the results of the dissolution rate measurements are used.

Paper Details

Date Published: 25 August 1987
PDF: 8 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940309
Show Author Affiliations
Yoshimitsu Okuda, Matsushita Electronics Corporation (Japan)
Tohru Ohkuma, Matsushita Electronics Corporation (Japan)
Yukio Takashima, Matsushita Electronics Corporation (Japan)
Yukio Miyai, Matsushita Electronics Corporation (Japan)
Morio Inoue, Matsushita Electronics Corporation (Japan)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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