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Proceedings Paper

Submicron Device Physics For Numerical Simulations
Author(s): Herbert S. Bennett
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Paper Abstract

Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and hydrogenated amorphous silicon emitters. These principles from crystalline device physics are summarized, and their implications for the noncrystalline regions of bipolar devices are given.

Paper Details

Date Published: 21 August 1987
PDF: 7 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987);
Show Author Affiliations
Herbert S. Bennett, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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