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Proceedings Paper

Study Of Conduction Band Tail States In A-Si,Ge:H,F Alloys By Electron Time-Of-Flight
Author(s): D. S. Shen; S. Aljishi; J. P. Conde; Z. E. Smith; V. Chu; S. Wagner
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Paper Abstract

The electron time-of-flight characteristics of un-alloyed a-Si:H and of a-Si,Ge:H,F alloys were studied. The log I -log t characteristics of the alloys are highly dispersive and include anomalous features. The characteristics depend strongly on measurement temperature, becoming more regular as the temperature increases. Substantial differences between low-gap alloys with comparable optical gaps are observed. Computer simulation suggests that an extra density of deep tail states, or the midgap states, are responsible for the anomalous characteristics.

Paper Details

Date Published: 21 August 1987
PDF: 10 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940154
Show Author Affiliations
D. S. Shen, Princeton University (United States)
S. Aljishi, Princeton University (United States)
J. P. Conde, Princeton University (United States)
Z. E. Smith, Princeton University (United States)
V. Chu, Princeton University (United States)
S. Wagner, Princeton University (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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