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Proceedings Paper

Endpoint Detection For Silicon Wafer Etching
Author(s): T. W. Sinor; E. R. Menzel
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Paper Abstract

We describe the design of a device for on-line endpoint monitoring of oxide thickness in silicon wafer etching. The endpoint is sensed by continuous in situ determination the Si02 layer thickness. The design utilizes an air-cooled Ar-laser whose plane polarized light passes through a rotating half-wave plate which alternately switches the polarization from transverse electric to transverse magnetic. The thus modulated beam is specularly reflected from the silicon wafer. AC detection instrumentation measures the normalized reflectance intensity (ITE - ITM)/(ITE + ITM ) which is a measure of the SiO2 film thickness. The normalization compensates for light intensity fluctuations.

Paper Details

Date Published: 6 April 1987
PDF: 6 pages
Proc. SPIE 0737, New Developments and Applications in Gas Lasers, (6 April 1987); doi: 10.1117/12.939677
Show Author Affiliations
T. W. Sinor, Texas Tech University (United States)
E. R. Menzel, Texas Tech University (United States)

Published in SPIE Proceedings Vol. 0737:
New Developments and Applications in Gas Lasers
Lee R. Carlson, Editor(s)

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