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Proceedings Paper

Materials Requirements For GaAs For Optoelectronic Applications
Author(s): J S Blakemore
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Paper Abstract

Gallium arsenide has been the premier semiconductor over the past 20 years as the host lattice for injection laser action, while GaAs itself and its III-V relatives in the GaAsP and AlGaAs ternary systems and the GaInAsP quaternary system have played important roles in the development of both sources (laser and LED) and detectors. Integrated optics carries this further in seeking to use the GaAs (or related semiconductor host) as the medium for optical waveguides, couplers, reflectors, etc.; with all functions including sources and detectors fabricated within a single chip. The materials requirements for this more complete utilization of the semiconductor set the priorities for the topics discussed in this paper. These include the physical characteristics of the zincblende lattice in which GaAs and its fellow III-V semiconductors crystallize; a lattice which is cubic, but is anisotropic in some significant respects. Several aspects of the optical and electronic properties are noted, the latter in regard to the active driving devices (such as FETs) which one wishes to incorporate into the same monolithic chip. Crystal growth methods for GaAs are briefly reviewed, drawing attention to the differences between the requirements for an int-egrated optoelectronic application and those (less stringent) for purely electronic microwave or digital applications.

Paper Details

Date Published: 26 September 1984
PDF: 8 pages
Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939451
Show Author Affiliations
J S Blakemore, Oregon Graduate Center (United States)

Published in SPIE Proceedings Vol. 0460:
Processing of Guided Wave Optoelectronic Materials I
Robert L. Holman; Donald Morgan Smyth, Editor(s)

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