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Proceedings Paper

Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films
Author(s): K Emery; L. R. Thompson; J J. Rocca; G. J. Collins
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Paper Abstract

A glow discharge electron beam has been used to deposit silicon dioxide (Si02) and silicon nitride (Si3N4) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The Si02 films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si3N4 films were deposited in silane-ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate temperatures from 50-400°C. The index of refraction, sthoichiometry, pinhole density, etch rate, conformal step coverage, and hydrogen bonding were measured.

Paper Details

Date Published: 14 June 1984
PDF: 8 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939440
Show Author Affiliations
K Emery, Colorado State University (United States)
L. R. Thompson, Colorado State University (United States)
J J. Rocca, Colorado State University, (United States)
G. J. Collins, Colorado State University (United States)

Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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