Proceedings Paper
Ellipsometric-Electrolyte Electroreflectance Study Of The Si/SiO[sub]2[/sub] Interface| Format | Member Price | Non-Member Price |
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Paper Abstract
Ellipsometry and electrolyte-electroreflectance have been combined as a destructive probe of the Si/Si02/KOH system. Optical measurements were made in the 3-4 eV photon energy range. The optical and electrical properties of the substrate/oxide interface of anodic and thermal oxides have been studied during the oxide etching. Changes in the ellipsometric parameters and the electroreflectance response of the substrate have been interpreted in terms of stoichiometric changes and the presence of surface states in the connective region between the Si semiconductor and its oxide.
Paper Details
Date Published: 10 May 1984
PDF: 12 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939297
Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)
PDF: 12 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939297
Show Author Affiliations
Orest J. Glembocki, Naval Research Laboratory (United States)
Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)
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