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Proceedings Paper

Raman Scattering And Luminescence Study Of Laser Beam Induced Effects In GaAs-AlAs Multiple Quantum Well Structures
Author(s): D. Kirillov; J. L. Merz
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Paper Abstract

The effect of CW argon laser radiation on a GaAs-AlAs multiple quantum well structure was studied. Raman scattering and quantum well lumiunescence excited by the same laser beam were used as probes. It was found that most important changes in the spectra were caused by laser beam heating of the crystalline lattice. The temperature inside the laser beam was determined as a function of laser power, position in the laser spot and scanning speed. An irreversible transformation of the superlattice to a phase with different optical properties was observed at a laser power threshold of 24kW/cm2; this is much lower than the threshold for sample destruction. Temperature dependences of energies of quantum well transitions and LO GaAs-like phonons were also measured. Breit-Wigner-Fano interference between LO AlAs-like phonons and the Raman active continuum was found.

Paper Details

Date Published: 10 May 1984
PDF: 8 pages
Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939285
Show Author Affiliations
D. Kirillov, University of California (United States)
J. L. Merz, University of California (United States)

Published in SPIE Proceedings Vol. 0452:
Spectroscopic Characterization Techniques for Semiconductor Technology I
Robert S. Bauer; Fred H. Pollak, Editor(s)

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