An in-vacuum lithography system is under development on beam line 111-3 at the Stanford Synchrotron Radiation Laboratory (SSRL). The beam line accepts 0.6 mrad of radiation from a bending magnet of the SPEAR storage ring and provides a beam of about 2 X 8 mm2 at the exposure station. Facilities for exposing photoresist with either filtered or monochromatic radiation are being developed in an effort to characterize the spectral sensitivity of state of the art photoresists. Design details and initial results are presented in which submicron features were printed on silicon wafers using boron nitride supported gold ab-sorber masks.

Date Published: 19 March 1984
PDF: 4 pages
Proc. SPIE 0448, X-Ray Lithography and Applications of Soft X-Rays to Technology, (19 March 1984); doi: 10.1117/12.939207

Published in SPIE Proceedings Vol. 0448:
X-Ray Lithography and Applications of Soft X-Rays to Technology
Alan D. Wilson, Editor(s)