Proceedings Paper
Semiconductive Preionization Technique| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
The semiconductive preionization technique involves the use of a semiconductive plate to produce a row of spark discharges which illuminates the laser gas. It is shown that the transverse resistance of the preionizer determines the arc free input energy, the laser output energy and the efficiency of the system.
Paper Details
Date Published: 21 October 1986
PDF: 3 pages
Proc. SPIE 0650, High Power Lasers and Their Industrial Applications, (21 October 1986); doi: 10.1117/12.938080
Published in SPIE Proceedings Vol. 0650:
High Power Lasers and Their Industrial Applications
Dieter Schuoecker, Editor(s)
PDF: 3 pages
Proc. SPIE 0650, High Power Lasers and Their Industrial Applications, (21 October 1986); doi: 10.1117/12.938080
Show Author Affiliations
Bruno Walter, Institut fur Nachrichtentechnik und Hochfrequenztechnik (Austria)
Dieter Schuocker, Institut fur Nachrichtentechnik und Hochfrequenztechnik (Austria)
Published in SPIE Proceedings Vol. 0650:
High Power Lasers and Their Industrial Applications
Dieter Schuoecker, Editor(s)
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