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Proceedings Paper

Status Of CID InSb Detector Technology
Author(s): M . D. Gibbons; S. C. Wang
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Paper Abstract

This paper reviews Indium Antimonide Charge Injection Device (CID) Technology. These detectors consist of MIS capacitors formed on InSb wafers using integrated circuit-like processing. When biased into depletions, the capacitors form integrating detectors for use in the 3-5 μ band. Single capacitors are used to form line array sites while two coupled capacitors form sites of area arrays. Silicon scanning chips are used to address the sites and implement the readout of the signal charge. Advances in the technology permit the design of IR focal planes with large numbers of detectors. General Electric has developed line arrays with up to 512 elements and staring arrays with up to 128 x 128 elements. This paper first reviews the basic CID mechanisms and briefly describes array fabrication. This is followed by a description of InSb line arrays along with their readouts and performance. Two dimensional arrays and their readouts are presented including the 128 x 128 staring array.

Paper Details

Date Published: 9 December 1983
PDF: 16 pages
Proc. SPIE 0443, Infrared Detectors, (9 December 1983);
Show Author Affiliations
M . D. Gibbons, General Electric Co. (United States)
S. C. Wang, General Electric Co. (United States)

Published in SPIE Proceedings Vol. 0443:
Infrared Detectors
William L. Wolfe, Editor(s)

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